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| Ordering number : ENA0472 FTD2017R SANYO Semiconductors DATA SHEET FTD2017R Features * * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1000mm20.8mm)1unit Mounted on a ceramic board (1000mm20.8mm) Conditions Ratings 20 12 6 40 1.2 1.25 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS= 8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=4.5V ID=6A, VGS=4V ID=3A, VGS=3.1V ID=3A, VGS=2.5V Ratings min 20 1 10 0.5 6.9 11 12 14 14.4 11.5 17 18 19 20 23 24 30 33 1.3 typ max Unit V A A V S m m m m Static Drain-to-Source On-State Resistance Marking : D2017R Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1506PA TI IM TC-00000296 No. A0472-1/4 FTD2017R Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A IS=6A, VGS=0V Ratings min typ 960 2700 5500 5400 10 1 4 0.83 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7006A-005 0.95 Electrical Connection 8 7 6 5 3.0 0.125 8 5 0.5 1 0.95 4 0.25 0.65 0.05 1.0 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain SANYO : TSSOP8 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain Top view 1 2 3 4 Switching Time Test Circuit VIN 4.5V 0V VIN ID=5A RL=2 VDD=10V 0.425 6.4 4.5 D PW=10s D.C.1% Rg VOUT G P.G FTD2017R 50 S Rg=2.4k No. A0472-2/4 FTD2017R 6 ID -- VDS V 2.5V 10 ID -- VGS VDS=6V 4 .0 5 10V 7 .5 V 4 .5 V .5 =1 GS V V 9 8 Drain Current, ID -- A V Drain Current, ID -- A 3.1 4 7 6 5 3 2 3 2 1 1 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 0 0.5 1.0 1.5 2.0 2.5 IT11786 Drain-to-Source Voltage, VDS -- V 50 IT11785 40 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 45 40 35 30 35 30 25 20 15 10 5 0 --100 --25C 25C 4 Ta=75 C ID=6A 3A 3A I D= 3. S= , VG 1V 25 20 15 10 5 0 0 2 4 6 8 10 12 IT11787 3A I D= , =2. VGS 5V , VG 6A I D= V 4. S= 5V VG 6A, I D= 4.0 S= --50 0 50 100 150 200 IT11788 Gate-to-Source Voltage, VGS -- V 3 Case Temperature, Tc -- C 10 7 5 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 2 10 7 5 3 2 1.0 7 5 3 2 VDS=10V Source Current, IS -- A C 25 C -25 =C Tc 75 3 2 1.0 7 5 2 0.1 7 0.01 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 2 5 7 10 IT11789 10 9 0 0.2 0.4 Tc=75 C 25C --25C 0.6 3 0.8 1.0 1.2 IT11790 Diode Forward Voltage, VSD -- V SW Time -- ID VGS -- Qg VDS=10V ID=6A Switching Time, SW Time -- ns 10000 7 5 td(off) tf Gate-to-Source Voltage, VGS -- V 2 3 5 7 8 7 6 5 4 3 2 1 0 3 2 tr 1000 7 5 0.1 2 3 td(on) 5 7 1.0 Drain Current, ID -- A 10 IT11323 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC IT11791 No. A0472-3/4 FTD2017R 100 7 5 3 2 ASO Allowable Power Dissipation, PD -- W IDP=40A 1.4 PD -- Ta Mounted on a ceramic board (1000mm20.8mm) 10s 10 0 1m s s ms 1.25 1.2 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=6A 10 10 0m 1.0 DC Operation in this area is limited by RDS(on). s 0.8 To t op al era di tio n 0.6 1u ss ni ip t ati on 0.4 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (1000mm20.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 23 IT11852 0.2 0 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -- V Ambient Temperature, Ta -- C IT11853 Allowable Power Dissipation(FET1), PD -- W 1.4 PD(FET1) -- PD(FET2) 1.2 M ou 1.0 nte do na 0.8 ce ram ic bo 0.6 ard (1 00 0m 0.4 m2 0 .8m 0.2 0 0 0.2 0.4 0.6 0.8 1.0 m) 1.2 1.4 IT11854 Allowable Power Dissipation(FET2), PD -- W Note on usage : Since the FTD2017R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0472-4/4 |
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